单纵模激光的再生放大

调Ｑ激光器的输出单纵模脉冲经衰减和削波后，被注入到一Ｎｄ∶ＹＬＦ调Ｑ副腔里，注入脉冲能量１．２ｎＪ，放大以后的脉冲能量１．５ｍＪ，增益达１０６；脉宽由６ｎｓ压缩到４．５ｎｓ。实验和理论分析均表明，当注入信号脉宽短于放大器腔来回一周的时间时，副腔对单纵模激光的放大是一种再生放大行为，单纵模激光的再生放大消除了注入锁定中苛刻的腔长匹配要求。     

基于分形理论的图象编码改进算法

基于分形理论的图象编码算法可以获得比经典图象编码算法高得多的压缩比，是很有潜力的一种算法。基本的分形图象编码技术虽然有许多优点，但其细码时间长，匹配复杂，从实用考虑，还须从多方面进行改进以提高性能。本文给出一种自适应的改进算法，利用混合编码将块截短编码（BTC）与分形编码技术相结合，同时采用三级分决技术和块分类技术，使压缩比可在20～256之间随图象特点而取值，此算法在信噪比（PSNR）方面亦有所提高。     

一种先进的短波实时选频和跳频通信控制器的设计和实现

本文首先论述了短波实时选频和跳频通信的工作机理；然后讨论了控制器的两个主要功能模块，并对其跳频通信技术和控制器硬件结构，软件实现方法作了较详尽的介绍；最后给出了实时选频和跳频通信系统的实际线路实验情况。     

连续Gabor展开离散化后的混叠问题

为能进行数值计算，需对连续Ｇａｂｏｒ展开离散化有限化。本文就时域与频域两种情况，给出了在过采样率的一般情况下，有限离散化后的Ｇａｂｏｒ展开系数与原连续Ｇａｂｏｒ展开系数之间的关系，并由此推出了离散Ｇａｂｏｒ展开系数不产生混叠的条件——连续Ｇａｂｏｒ展开离散化的采样定理。最后给出了一个计算实例     

Reliability of III–V based heterojunction bipolar transistors

This paper reviews the reliability of III-V based heterojunction bipolar transistors (HBTs). These devices have many potential advantages over other solid-state microwave devices. However, because of the tradeoff between performance and reliability, they are not being used to any great extent in power microwave applications. In the type of III-V HBT device most fully developed, the AlGaAs/GaAs HBT, leakage currents play a major role in the dominant mode of degradation. Because low-frequency noise is related to these leakage currents it has been used extensively in the analysis of the performance and reliability limitations of these devices. The reliability of other types of III-V HBT devices, such as InGaP/GaAs and InP based devices, is also discussed.     

现场可编程滤波器阵列单元

通过对通用数字滤波器公式的细致分析，建立了一种最为精简实用的滤波器模块单元，给出了模拟结果，进而提出了编程滤波器阵列单元的概念，提供了在实用数字滤波的具体实现中比数字信号处理（ＤＳＰ）更直接，更高效的途径。     

Characterization of surface roughness anisotropy on mismatched InAIAs/lnP heterostructures

We have studied surface roughness on mismatched In_0.65Al_0.35As epilayers of various thicknesses on (001) InP. The sample set spans the entire range from coherently strained to completely relaxed epilayers. As characterization tools, we have used atomic force microscopy (AFM), laser light scattering (LLS), and variable azimuthal angle ellipsometry (VAAE). AFM reveals that the surfaces are covered by densely packed ellipsoidal islands elongated along the [1-10] direction. The island size increases with layer thickness. Island anisotropy and the root mean square of the surface roughness increase with increasing thickness but decrease upon full lattice relaxation. LLS intensity displays a prominent azimuthal dependence that correlates well with the two-dimensional power spectrum of the surface topography, as predicted by theory. VAAE reveals a sinusoidal dependence of the ellipsometric parameter Δ on azimuthal angle. The amplitude of A correlates well with the short wavelength anisotropy of the surface power spectrum. Our work suggests that LLS and VAAE are fast, nondestructive, sensitive techniques for characterization of surface roughness in mismatched III-V heterostructures.     

Low cost surface passivation for p-type mc-Si based on pseudobinary alloys (Al2O3)x(TiO2)1−x

The conventional process for back side passivation with full face Al screen printing layer is not suitable for very thin multicrystalline (mc-Si) solar cells and approaches to new technological processes are searched for. More investigations have been concentrated on local aluminum contacts and passivation coatings with different layers on mc-Si wafers. The aim of this work is to prove that (Al₂O₃)_x(TiO₂)_1−x is one promising candidate to be applied as passivation layer on multicrystalline Si. Investigations were performed on dielectric films of pseudobinary alloy (PBA) (Al₂O₃)_x(TiO₂)_1−x, prepared by chemical solution deposition known initially as sol–gel method. It was determined that their optical, dielectric and electrophysical properties are suitable for applications of these layers as back side surface passivation for thin multicrystalline silicon cells.     

晶粒超细化方法在降低材料表面能过程中的作用

利用分子动力学的原理计算了几种超细金属晶粒的表面能。研究表明:在超细化的晶粒尺寸范围内,材料表面能随晶粒尺寸的进一步减小急剧降低,而当晶粒长大到约20 nm后,材料的表面能则很快升至一个稳定的极限值——宏观尺寸材料的表面能值。对材料表面进行晶粒的超细化处理可使材料具有极低的表面能特性,这一特性可以应用于高黏度流体的减阻输送等领域。     

Shape optimization of inclined ribs as heat transfer augmentation device

This work presents numerical optimization techniques for the design of a rectangular channel with inclined ribs toenhance turbulent heat transfer.The response surface method with Reynolds-averaged Navier-Stokes analysis isused for optimization.Shear stress transport turbulence model is used as a turbulence closure.Computational re-sults for local heat transfer rate show a reasonable agreement with the experimental data.Width-to-rib height ratioand attack angle of the rib are chosen as design variables.The objective function is defined as a linear combina-tion of heat-transfer and friction-loss related terms with the weighting factor.Full-factorial experimental designmethod is used to determine the data points.Optimum shapes of the channel have been obtained in a range of theweighting factor.